savantic semiconductor product specification silicon npn power transistors 2SC4110 description with to-3pn package fast switching speed wide area of safe operation high voltage,high reliability applications for switching regulator applications pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(t c =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 25 a i cp collector current-peak 40 a i b base current 8 a t c =25 160 p c collector power dissipation t a =25 2.5 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4110 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;r be = < 400 v v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 500 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 7 v v ce (sat) collector-emitter saturation voltage i c =16a; i b =3.2a 0.8 v v be (sat) base-emitter saturation voltage i c =16a; i b =3.2a 1.5 v i cbo collector cut-off current v cb =400v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =3.2a ; v ce =5v 15 50 h fe-2 dc current gain i c =16a ; v ce =5v 10 h fe-3 dc current gain i c =10ma ; v ce =5v 10 f t transition frequency i c =3.2a ; v ce =10v 20 mhz c ob output capacitance i e =0; v cb =10v,f=1mhz 300 pf switching times t on turn-on time 0.5 s t s storage time 2.5 s t f fall time i c =20a; i b1 =4a;i b2 =-8a r l =10 c ;v cc =200v 0.3 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC4110 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm)
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